(PE)ALD TaCN film nucleation and growth on TiNx: influence of nitrogen content - Archive ouverte HAL Access content directly
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(PE)ALD TaCN film nucleation and growth on TiNx: influence of nitrogen content

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hal-00949998 , version 1 (20-02-2014)

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  • HAL Id : hal-00949998 , version 1

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F. Piallat, R. Gassilloud, B. Pelissier, Cédric Leroux, P. Caubet, et al.. (PE)ALD TaCN film nucleation and growth on TiNx: influence of nitrogen content. 25th International Conference on Amorphous and Nano-crystalline Semiconductors, ICANS25, Aug 2013, Toronto, Canada. ⟨hal-00949998⟩
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