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Structure: Internal structure identifier : 23639

Impact of hot carrier stress on small signal MOSFET RF parameters

L. Negre , Daniel Roy , S. Boret , P. Scheer , N. Kauffmann et al.
IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States
Conference papers hal-00604565v1

Profile control and sidewall modifications of narrow porous ULK trenches after plasma etching and pore sealing treatments

Maxime Darnon , Thierry Chevolleau , D. Eon , Fanny Bailly , Bernard Pélissier et al.
53rd International AVS Symposium, 2006, San Francisco, United States
Conference papers hal-00400479v1

Residue growth on metallic-hard mask after dielectric etching in fluorocarbon-based plasmas. I. Mechanisms

N. Posseme , T. Chevolleau , R. Bouyssou , T. David , V. Arnal et al.
Journal of Vacuum Science and Technology, 2010, pp.B 28, 809
Journal articles hal-00647504v1

Patterning of silicon nitride for CMOS gate spacer technology. I. Mechanisms involved in the silicon consumption in CH3F/O2/He high density plasmas

R. Blanc , F. Leverd , T. David , O. Joubert
Journal of Vacuum Science and Technology, 2013, B 31, pp.051801. ⟨10.1116/1.4816466⟩
Journal articles hal-00968781v1

Reduction of Oxygen Content in Thin PVD-TiN Film and Improvement of Electrical Characteristics by Covering it with PEALD-TaCN

F. Piallat , R. Gassilloud , P. Caubet , B. Pelissier , Cédric Leroux et al.
2013 MRS Spring Meeting, 2013, San Francisco, United States
Conference papers hal-00908484v1

Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica et al.
IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865
Journal articles hal-00596201v1

Role of H2 plasma in PE-MOCVD of GeTe materials for Phase Change Memory Applications

L. Dussault , Corentin Vallée , E. Gourvest , D. Jourde , S. Maitrejean et al.
MAM 2012, Mar 2012, Grenoble, France
Conference papers hal-00669530v1

Plasma treatments to improve Linewidth roughness during gate patterning

L. Azarnouche , E. Pargon , K. Menguelti , M. Fouchier , M. Brihoum et al.
Proceedings of SPIE, the International Society for Optical Engineering, 2012, Vol. 8328, 83280H, 11pp
Journal articles hal-00808681v1

Characterization of Plasma-Induced Damages on low-k during Interconnection Integration by Scatterometric Porosimetry

R. Hurand , Maxime Darnon , T. Chevolleau , D. Fuard , F. Bailly et al.
AVS 58h international symposium, Oct 2011, Nashville, United States
Conference papers hal-00647640v1

Study of 193-nm resist degradation under various etch chemistries

Arnaud Bazin , Michael May , Erwine Pargon , Benedicte Mortini , Olivier Joubert et al.
SPIE Advances in Resist Materials and Processing Technology, 2007, San Jose, United States. ⟨10.1117/12.711415⟩
Conference papers hal-00384232v1

MIM capacitors based on Yttrium oxide – Lanthanum aluminate stacks

Myrtil L. Kahn , Corentin Vallée , C. Dubourdieu , C. Durand , S. Blonkowski et al.
Workshop "Nouveaux oxydes à forte permittivité..", 2005, Autrans, France
Conference papers hal-00486162v1

Performance predictions of interconnect networks for advanced technology nodes

M. Gallitre , A. Farcy , B. Blampey , C. Bermond , B. Fléchet et al.
Microelectronic Engineering, 2010, 87 (3), pp.321-323. ⟨10.1016/j.mee.2009.09.003⟩
Journal articles hal-00602047v1

Etude d'une méthodologie de caractérisation de filtres CRF à grande échelle

W. Sahyoun , J.-M. Duchamp , N. Corrao , Ph. Benech , G. Parat et al.
Etude d'une méthodologie de caractérisation de filtres CRF à grande échelle, May 2009, Grenoble, France
Conference papers hal-00603024v1

Critical failure ORC: Improving model accuracy through enhanced model generation

A. Borjon , J. Belledent , Y. Trouiller , K. Patterson , K. Lucas et al.
Microelectronic Engineering, 2006, 83, Issues 4-9, pp.1017-1022. ⟨10.1016/j.mee.2006.01.034⟩
Journal articles istex hal-00023226v1

Scatterometric Porosimetry for porous low-k patterns characterization

R. Hurand , R. Bouyssou , Maxime Darnon , C. Tiphine , C. Licitra et al.
Interconnect Technology Conference and Materials for Advanced Metallization (IITC/MAM), May 2011, Dresde, Germany
Conference papers hal-00647417v1

Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Casse et al.
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
Journal articles hal-00996453v1

Materials and processes for non-volatile resistive memories

C. Vallee , P. Gonon , C. Mannequin , E. Gourvest , L. Dussault et al.
MAM 2012, Mar 2012, Grenoble, France
Conference papers hal-00669444v1
Image document

Plasma etching of HfO2 at elevated temperatures in chlorine-based chemistry

M. Helot , Thierry Chevolleau , L. Vallier , O. Joubert , Elisabeth Blanquet et al.
Journal of Vacuum Science and Technology, 2006, 24 (1), pp.30-40. ⟨10.1116/1.2134707⟩
Journal articles hal-00397060v1
Image document

Etching Process Scalability and Challenges for ULK Materials

T. Chevolleau , N. Posseme , T. David , R. Bouyssou , J. Ducote et al.
International Interconnect Technology Conference, IITC, Jun 2010, Dresde, Germany. ⟨10.1109/IITC.2010.5510735⟩
Conference papers hal-00625314v1

Statistics of electrical breakdown in high-K materials from millimeter to nanometer length scales: macroscopic testing vs. conductive-AFM

C. Sire , S. Blonkowski , M. Gordon , T. Baron
MRS Fall Meeting, Nov 2007, Boston, United States
Conference papers hal-00396816v1

SrTiO3/Y2O3 bilayered dielectrics for MIM capacitor elaboration with improved electrical properties

Myrtil L. Kahn , Corentin Vallée , E. Defay , M. Bonvalot , C. Dubourdieu et al.
Workshop on Dielectrics in Microelectronics WoDiM, 2006, Italy
Conference papers hal-00390510v1

Impact on wafer to wafer repeatability of cleaning/coating strategies in a 300mm ICP plasma reactor

L. Babaud , P. Gouraud , O. Joubert , E. Pargon
55th International AVS Symposium & Topical Conferences, Oct 2008, boston, United States
Conference papers hal-00400652v1

Resolving contact conflict for double patterning split

N. Zeggaoui , V. Farys , Y. Troullier , E. Yesilada , F. Robert et al.
BACUS conference, 2009, Monterey USA, United States
Conference papers hal-00461055v1

Analysis of the diffraction pattern for optimal assist feature placement

A. Borjon , J. Belledent , Y. Trouiller , C. Gardin , C. Couderc et al.
Microelectronic Engineering, 2007, 84 (5-8), pp.741-745. ⟨10.1016/j.mee.2007.01.016⟩
Journal articles istex hal-00291568v1

Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology

C. Fenouillet-Beranger , P. Perreau , T. Benoist , C. Richier , S. Haendler et al.
Solid-State Electronics, 2013, 88, pp.15-20,. ⟨10.1016/j.sse.2013.04.008⟩
Journal articles hal-01002051v1

PECVD of GeTe for next generation of non volatile memory

Corentin Vallée , L. Dussault , E. Despiau-Pujo , E. Gourvest , D. Jourde et al.
18th International Colloquium on Plasma Processes (CIP), Jul 2011, rennes, France
Conference papers hal-00925819v1

Sidewall Modification of Porous SiOCH Induced by Etching and Post Etching Plasma Treatments

R. Bouyssou , T. Chevolleau , M. El Kodadi , M. Besacier , N. Possémé et al.
3rd Plasma Etch and Strip in Microelectronics Workshop, Mar 2010, Grenoble, France
Conference papers hal-00625382v1

(PE)ALD TaCN film nucleation and growth on TiNx: influence of nitrogen content

F. Piallat , R. Gassilloud , B. Pelissier , Cédric Leroux , P. Caubet et al.
25th International Conference on Amorphous and Nano-crystalline Semiconductors, ICANS25, Aug 2013, Toronto, Canada
Conference papers hal-00949998v1

Wideband frequency and in-situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

T. Bertaud , C. Bermond , T. Lacrevaz , Corentin Vallée , Y. Morand et al.
18th Materials for Advanced Metallization Conference, Mar 2009, Grenoble, France
Conference papers hal-00602814v1

Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking

E. Eid , T. Lacrevaz , S. de Rivaz , C. Bermond , B. Fléchet et al.
Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking, Sep 2009, San Francisco, United States
Conference papers hal-00602866v1