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Structure: Internal structure identifier : 51016

Synchronization of Dictyostelium discoideum adhesion and spreading using electrostatic forces

M. Socol , C. Lefrou , F. Bruckert , D. Delabouglise , M. Weidenhaupt et al.
Bioelectrochemistry, 2010, 79 (2), pp.198-210. ⟨10.1016/j.bioelechem.2010.04.003⟩
Journal articles hal-01067531v1

The structural properties of GaN/AlN core-shell nanocolumn heterostructures

K. Hestroffer , R. Mata , D. Camacho , C. Leclere , G. Tourbot et al.
Nanotechnology, 2010, 21 (41), pp.415702 -415709. ⟨10.1088/0957-4484/21/41/415702⟩
Journal articles istex hal-01067031v1
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Etude et caractérisation des films minces lors du procédé de lithographie par nanoimpression

Frederic Lazzarino
Physique [physics]. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨NNT : ⟩
Theses tel-00128711v1

Impact of planarization soft layers on full 200mm wafer imprinting uniformity

Tanguy Lévéder , Stéfan Landis , Laurent Davoust , Nicolas Chaix
5th International Conference on Nanoimprint and Nanoprint Technology (NNT 2006), Nov 2006, San Fransisco, United States
Conference papers hal-00203956v1
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Epitaxies Si/SiGe(C) pour transistors bipolaires avancés

Florence Brossard
Matière Condensée [cond-mat]. Université Joseph-Fourier - Grenoble I, 2007. Français. ⟨NNT : ⟩
Theses tel-00200095v1

Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress

M. Ruat , N. Revil , G. Pananakakis , G. Ghibaudo
IEEE Bipolar - BiCMOS Circuits and Technology Meeting (BCTM2006), 2006, Maastricht, Netherlands. pp.XX
Conference papers hal-00147125v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
WoDIM 2006, 2006, Catania, Italy. pp.XX
Conference papers hal-00147130v1

New insight on Stress Induced Leakage Current on SiO2/HfO2 stack

M. Rafik , G. Ribes , G. Ghibaudo
XX, 2006, XX, France. pp.XX
Conference papers hal-00147141v1

Reliability characteristics of 150GHz fT/fmax Heterojunction Bipolar Transistors under reverse, forward and mixed-mode stress

M. Ruat , J. Bourgeat , M. Marin , G. Ghibaudo , N. Revil et al.
Int. Reliability Workshop 2006, 2006, Stanford Sierra, United States. pp.XX
Conference papers hal-00147143v1

Impact of Film Thickness on LF Noise in SOI Devices

L. Zafari , J. Jomaah , G. Ghibaudo
International Conference on Solid State Devices and Materials (SSDM 2006), 2006, Japan, Japan. pp.XX
Conference papers hal-00147157v1

Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides

T. Contaret , T. Boutchacha , G. Ghibaudo , F. Bœuf , T. Skotniki et al.
ULIS conference, 2006, Grenoble, France. pp.XX
Conference papers hal-00146961v1

Chalcopyrite thin-film solar cells by industry-compatible ink-based process

F. Roux , S. Amtablian , M. Anton , G. Besnard , L. Bilhaut et al.
Solar Energy Materials and Solar Cells, 2013, 115, pp.86-92. ⟨10.1016/j.solmat.2013.03.029⟩
Journal articles hal-00996640v1

Influence of induced stress on enrichment kinetic during local Ge condensation of SiGe/SOI mesas

N. Dechoux , J.F Damlencourt , P. Rivallin , P. Brianceau , S. Bernasconi et al.
Thin Solid Films, 2010, 518, pp.S92-S95
Journal articles hal-00669421v1

Dielectric relaxation in hafnium oxide: a study of transient currents and admittance spectroscopy in HfO2 metal-insulator-metal devices

C. Mannequin , P. Gonon , Corentin Vallée , A. Bsiesy , H. Grampeix et al.
Journal of Applied Physics, 2011, pp.110 104108
Journal articles hal-00669406v1

Comparative study of non-polar switching behaviors of NiO and HfO2-based oxide resistive-RAMs

V. Jousseaume , A. Fantini , J.F. Nodin , C. Guedj , A. Persico et al.
Solid-State Electronics, 2011, 58, pp.62-67
Journal articles hal-00669415v1

Investigation on full 6'' masks using innovative solutions for direct physico-chemical analyses of Mask backglass contamination and Haze

B. Pelissier , L. Dussault , F. Dufaye , S. Gough , J. Hamonne et al.
Microelectronic Engineering, 2013, 104, pp.120-129
Journal articles hal-00949974v1

Comparative study on dry etching of α- and β-SiC nano-pillars

J.H. Choi , L. Latu-Romain , Edwige Bano , A. Henry , W.J. Lee et al.
Materials Letters, 2012, pp.87 (2012) 9-12
Journal articles hal-00778010v1

Physics of Cellular Mechanosensing

A. Nicolas , S.A. Safran
De Gennes Days, Jan 2010, Dead see, Israel
Conference papers hal-00649937v1

Pre-Breakdown Negative Differential Resistance in thin oxide film: Conductive-Atomic Force Microscopy observation and modelling

P. Delcroix , S. Blonkowski , M. Kogelschatz
Journal of Applied Physics, 2011, pp.110, 034104
Journal articles hal-00649928v1

Mean time to failure distribution in thin oxide film: Observation at nano and devices scale and modelling using a filamentary growth model

P. Delcroix , S. Blonkowski , M. Kogelschatz , M. Rafik
SSDM Conference, Sep 2011, Nagoya, Japan
Conference papers hal-00649930v1

Ferromagnetic resonance in large arrays of dipolar-coupled micro- and nanostructures

N. Mikuszeit , A. Marty , A. Juvenal , J.P. Michel , B. Viala et al.
Magnetism and Magnetic Materials, Nov 2013, Denver, United States
Conference papers hal-00941675v1

Study of HfO2 or HfSiOx /SrTiO3 and SrTiO3/Y2O3 MIM capacitors

Myrtil L. Kahn , Corentin Vallée , C. Dubourdieu , E. Defay , M. Bonvalot et al.
53h National Symposium AVS, Nov 2006, San Francisco, United States
Conference papers hal-00669567v1

Patterning of GexSbxTey for non volatile phase-change memory applications

B. Salhi , T. Chevolleau , C. Vizioz , C. Jahan , S. Maitrejean et al.
PESM 2012, Mar 2012, Grenoble, France
Conference papers hal-00669521v1

From Si nanowires to SiC nanostructures

L. Latu-Romain , M. Ollivier , S. David , M. Martin , T. Baron et al.
E-MRS Spring Meeting, May 2012, Strasbourg, France
Conference papers hal-00778020v1
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Raphael Clerc , Gérard Ghibaudo
International Journal of High Speed Electronics and Systems, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩
Journal articles hal-00917094v1

Study of the modifications induced by plasma VUV light on 193nm photoresist for the development of plasma cure treatments

M. Fouchier , E. Pargon , L. Azarnouche , O. Luere , K. Menguelti et al.
63rd Gaseous Electronics Conference (GEC), Oct 2010, Paris, France
Conference papers hal-00644015v1

Dual wavelength cw microlaser for the generation of THz radiation

F. Pallas , E. Hérault , G. Grosa , J.-F. Roux , J.-L. Coutaz et al.
"Dual wavelength cw microlaser for the generation of THz radiation", Sep 2010, Rome, Italy
Conference papers hal-00603246v1

Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

K. Bennamane , I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Balestra et al.
Electronics Letters, 2013, 49 (7), pp.490-491. ⟨10.1049/el.2012.4150⟩
Journal articles hal-00994288v1

Identification of halogen containing radicals in silicon etching plasmas and density measurement by UV broad band absorption spectroscopy

M. Kogelschatz , G. Cunge , N. Sadeghi
Journal of Physics D: Applied Physics, 2004, 37 (14), pp.1954. ⟨10.1088/0022-3727/37/14/010⟩
Journal articles istex hal-00944895v1

Contact thickness effects in bottom-contact coplanar organic field-effect transistors

Yong Xu , W. Scheideler , Chuan Liu , F. Balestra , K. Tsukagoshi et al.
IEEE Electron Device Letters, 2013, 34 (4), pp.535-7. ⟨10.1109/LED.2013.2244059⟩
Journal articles hal-00994309v1