RF vs Dual Frequency: strong improvement of CMOS metal gate deposition (TaCN and TiCN) thanks to the precursor fragmentation modification - Archive ouverte HAL Access content directly
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RF vs Dual Frequency: strong improvement of CMOS metal gate deposition (TaCN and TiCN) thanks to the precursor fragmentation modification

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hal-00908479 , version 1 (23-11-2013)

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  • HAL Id : hal-00908479 , version 1

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F. Piallat, Corentin Vallée, R. Gassilloud, P. Michallon, B. Pelissier, et al.. RF vs Dual Frequency: strong improvement of CMOS metal gate deposition (TaCN and TiCN) thanks to the precursor fragmentation modification. AVS 2013, Oct 2013, Long Beach, United States. ⟨hal-00908479⟩
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