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https://hal.science/hal-00908479
Submitted on : Saturday, November 23, 2013-4:13:08 PM
Last modification on : Wednesday, October 20, 2021-3:47:03 AM
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- HAL Id : hal-00908479 , version 1
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F. Piallat, Corentin Vallée, R. Gassilloud, P. Michallon, B. Pelissier, et al.. RF vs Dual Frequency: strong improvement of CMOS metal gate deposition (TaCN and TiCN) thanks to the precursor fragmentation modification. AVS 2013, Oct 2013, Long Beach, United States. ⟨hal-00908479⟩
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