Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes - Archive ouverte HAL Access content directly
Conference Papers Year : 2022

Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes

Arthur Boutry
  • Function : Author
  • PersonId : 1079360
Cyril Buttay
Besar Asllani
Bruno Lefebvre
  • Function : Author
  • PersonId : 1082781
Eric Vagnon
Dong Dong
  • Function : Author
  • PersonId : 1164084

Abstract

IGCTs are attractive power semiconductor devices for HVDC applications. However, their switching speed at turn-on can only be controlled by the means of an external snubber circuit, which adds complexity and cost. This paper investigates experimentally the possibility to downsize and even completely remove this turn-on snubber/clamp in the case of an MMC submodule based on 6.5 kV IGCTs, using fast silicon diode modules (rated at up to 13 kA µs −1). The removal is found to be possible, although limiting phenomena (dynamic avalanche and snap-off) appear, reducing the actual operating range of the submodule.
Fichier principal
Vignette du fichier
2022125210.pdf (2.77 Mo) Télécharger le fichier
20220908 EPE 2022 final.pdf (2.52 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-03775977 , version 1 (13-09-2022)

Identifiers

  • HAL Id : hal-03775977 , version 1

Cite

Arthur Boutry, Cyril Buttay, Besar Asllani, Bruno Lefebvre, Eric Vagnon, et al.. Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes. Proceedings of the European Power Electronics conference (EPE ECCE 2022), Sep 2022, Hannovre, Germany. ⟨hal-03775977⟩
40 View
144 Download

Share

Gmail Facebook X LinkedIn More