Experimental study of the reduction and removal of turn-on snubber for IGCT based MMC submodule using fast silicon diodes
Résumé
IGCTs are attractive power semiconductor devices for HVDC applications. However, their switching speed at turn-on can only be controlled by the means of an external snubber circuit, which adds complexity and cost. This paper investigates experimentally the possibility to downsize and even completely remove this turn-on snubber/clamp in the case of an MMC submodule based on 6.5 kV IGCTs, using fast silicon diode modules (rated at up to 13 kA µs −1). The removal is found to be possible, although limiting phenomena (dynamic avalanche and snap-off) appear, reducing the actual operating range of the submodule.
Domaines
Energie électrique
Fichier principal
2022125210.pdf (2.77 Mo)
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20220908 EPE 2022 final.pdf (2.52 Mo)
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