Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials - Archive ouverte HAL Access content directly
Journal Articles Journ. Appl. Phys. Year : 2013

Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

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hal-00994579 , version 1 (21-05-2014)

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M. Daanoune, A. Diab, S. Sirajeddine, A. Kaminski-Cachopo, I. Ionica, et al.. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials. Journ. Appl. Phys., 2013, 113 (Issue 18), pp.183702:1-5. ⟨10.1063/1.4804064⟩. ⟨hal-00994579⟩
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