Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journ. Appl. Phys. Année : 2013

Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

Fichier non déposé

Dates et versions

hal-00994579 , version 1 (21-05-2014)

Identifiants

Citer

M. Daanoune, A. Diab, S. Sirajeddine, A. Kaminski-Cachopo, I. Ionica, et al.. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials. Journ. Appl. Phys., 2013, 113 (Issue 18), pp.183702:1-5. ⟨10.1063/1.4804064⟩. ⟨hal-00994579⟩
37 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More