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Structure: Internal structure identifier : 89889

Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN

D.S. Kim , S.J. Chang , C.J. Lee , Y. Bae , S. Cristoloveanu et al.
Japanese Journal of Applied Physics, 2013, 52 (6), pp.061001. ⟨10.7567/JJAP.52.061001⟩
Journal articles hal-01017529v1

An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth

B. Sklenard , J.C. Barbe , P. Batude , P. Rivallin , C. Tavernier et al.
Applied Physics Letters, 2013, 102 (15), pp.151907. ⟨10.1063/1.4802203⟩
Journal articles hal-01017433v1

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

M.K. Joo , J. Huh , M. Mouis , S.J. Park , D.Y. Jeon et al.
Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩
Journal articles hal-01017436v1

Grain boundary composition and conduction in HfO2: An ab initio study

K.H. Xue , P. Blaise , L.R.C. Fonseca , G. Molas , E. Vianello et al.
Applied Physics Letters, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩
Journal articles hal-01017441v1

Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis

Z. Fang , H.Y. Yu , W. J. Fan , G. Ghibaudo , J. Buckley et al.
IEEE Transactions on Electron Devices, 2013, 60 (Issue3), pp.1272-1275. ⟨10.1109/TED.2013.2240457⟩
Journal articles hal-01017480v1

Interface-type resistive switching in perovskite materials

Sarunas Bagdzevicius , Klaasjan Maas , Michel Boudard , Monica Burriel
Journal of Electroceramics, 2017, pp.1-28. ⟨10.1007/s10832-017-0087-9⟩
Journal articles hal-01758865v1

Growth of 3D photonic crystals by photolysis of CrO2Cl2

M. Salaun , M. Audier , F. Delyon , M. Duneau
Journal of Crystal Growth, 2009, 311 (8), pp.2590-2596. ⟨10.1016/j.jcrysgro.2009.02.008⟩
Journal articles hal-01067734v1

Physical model of dielectric charging in MEMS

A. Koszewski , Frédéric Souchon , C. Dieppedale , D. Bloch , T. Ouisse et al.
Journal of Micromechanics and Microengineering, 2013, 23 (4), pp.045019;. ⟨10.1088/0960-1317/23/4/045019⟩
Journal articles hal-01067378v1

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

L. T. M. Hoa , T. Ouisse , D. Chaussende
Journal of Crystal Growth, 2012, 354 (1), pp.202-207. ⟨10.1016/j.jcrysgro.2012.06.009⟩
Journal articles hal-01067372v1

Oxidation resistance of decorative (Ti,Mg)N coatings deposited by hybrid cathodic arc evaporation-magnetron sputtering process

A. Hodroj , O. Chaix-Pluchery , Philippe Steyer , J. F. Pierson
Surface and Coatings Technology, 2011, 205 (19), pp.4547-4553. ⟨10.1016/j.surfcoat.2011.03.116⟩
Journal articles hal-01067373v1

Anisotropic In distribution in InGaN core-shell nanowires

Cédric Leclere , N. A. Katcho , G. Tourbot , B. Daudin , M. G. Proietti et al.
Journal of Applied Physics, 2014, 116 (1), pp.013517. ⟨10.1063/1.4886756⟩
Journal articles hal-01067036v1

Thickness effects on the texture development of fluorine-doped SnO[sub 2] thin films: The role of surface and strain energy

Vincent Consonni , Germain Rey , Hervé Roussel , Daniel Bellet
Journal of Applied Physics, 2012, 111 (3), pp.033523-7. ⟨10.1063/1.3684543⟩
Journal articles hal-01067042v1

Scaling growth kinetics of self-induced GaN nanowires

Vladimir G. Dubrovskii , Vincent Consonni , Lutz Geelhaar , Achim Trampert , Henning Riechert et al.
Applied Physics Letters, 2012, 100 (15), pp.153101-4. ⟨10.1063/1.3701591⟩
Journal articles hal-01067044v1

Second order incommensurate phase transition in 25L-Ta2O5

M. Audier , Bernard Chenevier , Hervé Roussel , A. Lintanf Salaün
Journal of Solid State Chemistry, 2010, 183 (9), pp.2068-2076. ⟨10.1016/j.jssc.2010.07.001⟩
Journal articles hal-01067570v1

Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process

R. Elleuch , R. Salhi , N. Maalej , J. L. Deschanvres , R. Maalej et al.
Materials Science and Engineering: B, 2013, 178 (17), pp.1124-1129. ⟨10.1016/j.mseb.2013.07.005⟩
Journal articles hal-01067595v1

The Mean-Field Theory for the Study of the Magnetocaloric Effect of Nd0.67Ba0.33Mn0.98Fe0.02O3 Manganite

Mohamed Hsini , Sobhi Hcini , Michel Boudard , Sadok Zemni
Journal of Superconductivity and Novel Magnetism, 2018, 31 (3), pp.841-848. ⟨10.1007/S10948-017-4259-2⟩
Journal articles hal-02311300v1
Image document

Flow property measurement for nanoimprint simulation

Tanguy Lévéder , Stéfan Landis , Laurent Davoust , Nicolas Chaix
Microelectronic Engineering, 2007, 84 (5-8), pp.928-931. ⟨10.1016/j.mee.2007.01.065⟩
Journal articles hal-00266796v1

A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

A. Diab , C. Fernandez , A. Ohata , N. Rodriguez , I. Ionica et al.
Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩
Journal articles hal-01001928v1

Metallic nanowire networks: effects of thermal annealing on electrical resistance

D. P. Langley , M. Lagrange , G. Giusti , Carmen Jiménez , Y. Bréchet et al.
Nanoscale Research Letters, 2014, 6 (22), pp.13535-13543. ⟨10.1039/c4nr04151h⟩
Journal articles hal-01122455v1

Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

M. Koyama , M. Casse , R. Coquand , S. Barraud , C. Vizioz et al.
Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩
Journal articles hal-01002176v1

Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs

B. Sklenard , P. Batude , Q. Rafhay , I. Martin-Bragado , C.Q. Xu et al.
Solid-State Electronics, 2013, 88, pp.9-14. ⟨10.1016/j.sse.2013.04.018⟩
Journal articles hal-01002090v1

Unexpected impact of germanium content in SiGe bulk PMOSFETs

C. Diouf , A. Cros , A. Soussou , D. Rideau , S. Haendler et al.
Solid-State Electronics, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩
Journal articles hal-01002182v1

Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

L. Rahhal , A. Bajolet , C. Diouf , F. Kergomard , J. Rosa et al.
Solid-State Electronics, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
Journal articles hal-01001970v1
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Pressure-temperature phase diagram of SrTiO3 up to 53 GPa

M. Guennou , P. Bouvier , J. Kreisel , D. Machon
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2010, 81 (5), pp.054115. ⟨10.1103/PhysRevB.81.054115⟩
Journal articles hal-01067367v1

Comparison of carrier velocity gain in Uniaxially and Biaxially Strained N-MOSFETs

T. Benshidoum , G. Ghibaudo , F. Boeuf
Electronics Letters, 2007, 43, pp.647648
Journal articles hal-00392835v1

Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs

A. Tsormpatzoglou , C. Dimitriadis , R. Clerc , Q. Rafhay , G. Pananakakis et al.
IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946
Journal articles hal-00392897v1

Contributions and Limits of Charge Pumping Measurement for Addressing Trap Generation in High-K/SiO2 Dielectric Stacks.

M. Rafik , G. Ghibaudo
IEEE IRPS 2008, Phoenix, Arizona, USA, Apr 2008, Phoenix, United States
Conference papers hal-00392166v1

Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET

A. Cathignol , B. Cheng , D. Chanemougame , A. R. Brown , K. Rochereau et al.
IEEE Electron Device Letters, 2008, 29 (6), pp.609-611
Journal articles hal-00392652v1

Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. Nitride

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier et al.
Microelectronics Reliability, 2008, 48 (8-9), pp.1198-1201
Journal articles hal-00392673v1

Coupling and Focusing THz surface plasmons by elliptical grating on bulk aluminium

G. Gaborit , D. Armand , M.A. Nazarov , M. Shkurinov , J.-L. Coutaz et al.
EOS Annual Meeting, Sep 2008, Paris, France
Conference papers hal-00394441v1