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Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n(+)-Source/Drain on a Selectively Etched GaN
D.S. Kim
,
S.J. Chang
,
C.J. Lee
,
Y. Bae
,
S. Cristoloveanu
et al.
Journal articles
hal-01017529v1
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An atomistic investigation of the impact of in-plane uniaxial stress during solid phase epitaxial regrowth
B. Sklenard
,
J.C. Barbe
,
P. Batude
,
P. Rivallin
,
C. Tavernier
et al.
Journal articles
hal-01017433v1
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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors
M.K. Joo
,
J. Huh
,
M. Mouis
,
S.J. Park
,
D.Y. Jeon
et al.
Journal articles
hal-01017436v1
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Grain boundary composition and conduction in HfO2: An ab initio study
K.H. Xue
,
P. Blaise
,
L.R.C. Fonseca
,
G. Molas
,
E. Vianello
et al.
Journal articles
hal-01017441v1
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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis
Z. Fang
,
H.Y. Yu
,
W. J. Fan
,
G. Ghibaudo
,
J. Buckley
et al.
Journal articles
hal-01017480v1
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Interface-type resistive switching in perovskite materials
Sarunas Bagdzevicius
,
Klaasjan Maas
,
Michel Boudard
,
Monica Burriel
Journal articles
hal-01758865v1
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Growth of 3D photonic crystals by photolysis of CrO2Cl2
M. Salaun
,
M. Audier
,
F. Delyon
,
M. Duneau
Journal articles
hal-01067734v1
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Physical model of dielectric charging in MEMS
A. Koszewski
,
Frédéric Souchon
,
C. Dieppedale
,
D. Bloch
,
T. Ouisse
et al.
Journal articles
hal-01067378v1
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Critical assessment of birefringence imaging of dislocations in 6H silicon carbide
L. T. M. Hoa
,
T. Ouisse
,
D. Chaussende
Journal articles
hal-01067372v1
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Oxidation resistance of decorative (Ti,Mg)N coatings deposited by hybrid cathodic arc evaporation-magnetron sputtering process
A. Hodroj
,
O. Chaix-Pluchery
,
Philippe Steyer
,
J. F. Pierson
Journal articles
hal-01067373v1
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Anisotropic In distribution in InGaN core-shell nanowires
Cédric Leclere
,
N. A. Katcho
,
G. Tourbot
,
B. Daudin
,
M. G. Proietti
et al.
Journal articles
hal-01067036v1
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Thickness effects on the texture development of fluorine-doped SnO[sub 2] thin films: The role of surface and strain energy
Vincent Consonni
,
Germain Rey
,
Hervé Roussel
,
Daniel Bellet
Journal articles
hal-01067042v1
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Scaling growth kinetics of self-induced GaN nanowires
Vladimir G. Dubrovskii
,
Vincent Consonni
,
Lutz Geelhaar
,
Achim Trampert
,
Henning Riechert
et al.
Journal articles
hal-01067044v1
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Second order incommensurate phase transition in 25L-Ta2O5
M. Audier
,
Bernard Chenevier
,
Hervé Roussel
,
A. Lintanf Salaün
Journal articles
hal-01067570v1
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Structural and luminescence correlation of annealed Er-ZnO/Si thin films deposited by AACVD process
R. Elleuch
,
R. Salhi
,
N. Maalej
,
J. L. Deschanvres
,
R. Maalej
et al.
Journal articles
hal-01067595v1
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The Mean-Field Theory for the Study of the Magnetocaloric Effect of Nd0.67Ba0.33Mn0.98Fe0.02O3 Manganite
Mohamed Hsini
,
Sobhi Hcini
,
Michel Boudard
,
Sadok Zemni
Journal articles
hal-02311300v1
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Flow property measurement for nanoimprint simulation
Tanguy Lévéder
,
Stéfan Landis
,
Laurent Davoust
,
Nicolas Chaix
Journal articles
hal-00266796v1
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration
A. Diab
,
C. Fernandez
,
A. Ohata
,
N. Rodriguez
,
I. Ionica
et al.
Journal articles
hal-01001928v1
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Metallic nanowire networks: effects of thermal annealing on electrical resistance
D. P. Langley
,
M. Lagrange
,
G. Giusti
,
Carmen Jiménez
,
Y. Bréchet
et al.
Journal articles
hal-01122455v1
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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs
M. Koyama
,
M. Casse
,
R. Coquand
,
S. Barraud
,
C. Vizioz
et al.
Journal articles
hal-01002176v1
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Influence of device architecture on junction leakage in low-temperature process FDSOI MOSFETs
B. Sklenard
,
P. Batude
,
Q. Rafhay
,
I. Martin-Bragado
,
C.Q. Xu
et al.
Journal articles
hal-01002090v1
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Unexpected impact of germanium content in SiGe bulk PMOSFETs
C. Diouf
,
A. Cros
,
A. Soussou
,
D. Rideau
,
S. Haendler
et al.
Journal articles
hal-01002182v1
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Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances
L. Rahhal
,
A. Bajolet
,
C. Diouf
,
F. Kergomard
,
J. Rosa
et al.
Journal articles
hal-01001970v1
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Pressure-temperature phase diagram of SrTiO3 up to 53 GPa
M. Guennou
,
P. Bouvier
,
J. Kreisel
,
D. Machon
Journal articles
hal-01067367v1
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Comparison of carrier velocity gain in Uniaxially and Biaxially Strained N-MOSFETs
T. Benshidoum
,
G. Ghibaudo
,
F. Boeuf
Electronics Letters, 2007, 43, pp.647648
Journal articles
hal-00392835v1
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Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs
A. Tsormpatzoglou
,
C. Dimitriadis
,
R. Clerc
,
Q. Rafhay
,
G. Pananakakis
et al.
IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946
Journal articles
hal-00392897v1
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Contributions and Limits of Charge Pumping Measurement for Addressing Trap Generation in High-K/SiO2 Dielectric Stacks.
M. Rafik
,
G. Ghibaudo
IEEE IRPS 2008, Phoenix, Arizona, USA, Apr 2008, Phoenix, United States
Conference papers
hal-00392166v1
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Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET
A. Cathignol
,
B. Cheng
,
D. Chanemougame
,
A. R. Brown
,
K. Rochereau
et al.
IEEE Electron Device Letters, 2008, 29 (6), pp.609-611
Journal articles
hal-00392652v1
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Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. Nitride
Mame Andallah Diop
,
N. Revil
,
M. Marin
,
F. Monsieur
,
P. Chevalier
et al.
Microelectronics Reliability, 2008, 48 (8-9), pp.1198-1201
Journal articles
hal-00392673v1
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Coupling and Focusing THz surface plasmons by elliptical grating on bulk aluminium
G. Gaborit
,
D. Armand
,
M.A. Nazarov
,
M. Shkurinov
,
J.-L. Coutaz
et al.
EOS Annual Meeting, Sep 2008, Paris, France
Conference papers
hal-00394441v1
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