Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 Conductive-Bridging-RAMs and HfO2 Oxide-RAMs - FMNT - Fédération Micro- et Nano- Technologies Accéder directement au contenu
Communication Dans Un Congrès Année : 2010
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hal-00625206 , version 1 (21-09-2011)

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  • HAL Id : hal-00625206 , version 1

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P. Gonon, C. Vallee, V. Jousseaume, Y. Bernard, C. Mannequin, et al.. Comparing the switching characteristics of two resistive RAM technologies: Cu-SiO2 Conductive-Bridging-RAMs and HfO2 Oxide-RAMs. Proc. 10th IEEE Int. Conference on Solid-State and Integrated Circuit Technology, 2010, Shanghai, China. ⟨hal-00625206⟩
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