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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2007

Transient radiation response of single- and multiple-gate FDSOI transistors to pulsed laser and heavy ion irradiation

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hal-00392930 , version 1 (09-06-2009)

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  • HAL Id : hal-00392930 , version 1

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M. Gaillardin, P. Paillet, V. Ferlet-Cavrois, J. Baggio, D. Mcmorrow, et al.. Transient radiation response of single- and multiple-gate FDSOI transistors to pulsed laser and heavy ion irradiation. IEEE Transactions on Nuclear Science, 2007, 54 (6), pp.2355-2362. ⟨hal-00392930⟩
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