A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range - FMNT - Fédération Micro- et Nano- Technologies Access content directly
Books Year : 2008

A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range

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hal-00391851 , version 1 (05-06-2009)

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  • HAL Id : hal-00391851 , version 1

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D. Bauza. A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range. in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008. ⟨hal-00391851⟩
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