Books
Year : 2008
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https://hal.science/hal-00391851
Submitted on : Friday, June 5, 2009-9:46:35 AM
Last modification on : Friday, March 24, 2023-2:52:52 PM
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- HAL Id : hal-00391851 , version 1
Cite
D. Bauza. A rigorous analysis of the parameters which govern the SILC in n-channel MOSFET's with oxide thickness in the 1-2 nm range. in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5). in 'MOSFETs: Properties, Preparations and Performance', Novapublishers, New York-USA (ISBN 978-1-60456-762-5), 2008. ⟨hal-00391851⟩
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