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Pulsed Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric applications

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hal-00390544 , version 1 (02-06-2009)

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  • HAL Id : hal-00390544 , version 1

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B. Pelissier, C. Durand, Corentin Vallée, M. Bonvalot, L. Vallier, et al.. Pulsed Plasma Enhanced MOCVD of high k Y2O3 layers for gate dielectric applications. Présentation MRS 2002 (fall meeting), 2002, boston, United States. ⟨hal-00390544⟩
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