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Communication Dans Un Congrès Année : 2023

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications

Résumé

A detailed analysis of Off-state gate-oxide breakdown (BD) mode and its location under non-uniform electric field is performed in 28nm fully-depleted silicon-on-insulator (FDSOI) N-MOSFET devices. We show that hard breakdown (HBD) occurs exclusively from the middle of the channel to the drain overlap extension for Off-state time-dependent dielectric-breakdown (TDDB). HBD is characterized under DC stress with different gate-length LG as a function of drain voltage VDS and temperature. We check that the leakage current is the better monitor for TDDB dependence precursor to HBD under Off-mode stress by using the proper modeling and discussing the different possible origin of the higher form factor B value under Off mode stressing.
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Dates et versions

hal-04604661 , version 1 (07-06-2024)

Identifiants

Citer

Tidjani Garba-Seybou, Xavier Federspiel, Frederic Monsieur, Mathieu Sicre, Florian Cacho, et al.. Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. 2023 IEEE International Reliability Physics Symposium (IRPS 2023), Mar 2023, Monterey, CA, United States. ⟨10.1109/IRPS48203.2023.10117725⟩. ⟨hal-04604661⟩
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