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Communication Dans Un Congrès Année : 2012

Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport

Résumé

This paper deals with electrical characterization of PiN diodes fabricated on an 8° offaxis 4H-SiC with a P++ layer selectively grown by vapour-liquid-solid (VLS) transport. It gives evidence for the first time that a high quality P-N junction can be achieved by using this technique. This paper also discusses the role of a high temperature annealing after the VLS growth on the P-N junction properties.
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Dates et versions

hal-04366810 , version 1 (29-12-2023)

Identifiants

  • HAL Id : hal-04366810 , version 1

Citer

Nicolas Thierry-Jebali, Mihai Lazar, Arthur Vo-Ha, Davy Carole, Véronique Soulière, et al.. Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport. Proceedings of the 2012 European Conference on Silicon Carbide and Related Materials ECSCRM, Sep 2012, Saint-Pétersbourg, Russia. 4p. ⟨hal-04366810⟩
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