Electrical characterization of PiN diodes fabricated on a p layer selectively grown by VLS transport
Résumé
This paper deals with electrical characterization of PiN diodes fabricated on an 8° offaxis
4H-SiC with a P++ layer selectively grown by vapour-liquid-solid (VLS) transport. It gives
evidence for the first time that a high quality P-N junction can be achieved by using this technique.
This paper also discusses the role of a high temperature annealing after the VLS growth on the P-N
junction properties.
Domaines
Energie électriqueOrigine | Fichiers produits par l'(les) auteur(s) |
---|