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Communication Dans Un Congrès Année : 2023

First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests

Résumé

The paper propose a methodology study to analyze the body diode robustness of SiC MOSFETs. Different manufacturers, are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test, (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT. BDCT applied current must be limited to avoid destruction related to the packaging but BDSCT enable to analyze both assembly degradation and bipolar degradation.
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Dates et versions

hal-04240602 , version 1 (13-10-2023)

Identifiants

  • HAL Id : hal-04240602 , version 1

Citer

Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, Régis Meuret, et al.. First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨hal-04240602⟩
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