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Communication Dans Un Congrès Année : 2023

Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology

Résumé

A full monolithic integration in multi-terminal SiC dies of a generic H-bridge power converter (800V/10A) consisting of dual N-type vertical MOSFET switches within only two multiterminal chips is proposed. Innovative two multiterminal monolithic power SiC-chips are introduced and studied by 2D Sentaurus simulations. The first one integrates the high-side row switches of the bridge and the second one integrates the low-side row switches. Static and dynamic operating modes were validated through 2D-Mixed-Mode simulations. Main new process bricks allowing backside insulating trenches based on plasma combined with photoelectrochemical etching are experimentally evaluated for the first time on power device SiC wafer.
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hal-04203163 , version 1 (11-09-2023)

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Ralph Makhoul, Nour Beydoun, Abdelhakim Bourennane, Luong Viet Phung, M. Lazar, et al.. Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology. 25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark. ⟨10.23919/EPE23ECCEEurope58414.2023.10264325⟩. ⟨hal-04203163⟩
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