On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation

Thibauld Cazimajou
Emmanuel Sarraute
Frédéric Richardeau

Résumé

This article proposes a generic and complete electrothermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol TM software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.
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hal-04147859 , version 1 (01-07-2023)

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Thibauld Cazimajou, Emmanuel Sarraute, Frédéric Richardeau. On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation. IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203258⟩. ⟨hal-04147859⟩
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