On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical Mosfet including Gate-Oxide Charge-Trapping Thermal Dependency. Application for Fast Transient Extreme Short-Circuit Operation
Résumé
This article proposes a generic and complete electrothermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are successfully performed using 2D Comsol TM software. Influence of fixed charges and traps at the 4H-SiC/SiO2 interface has been highlighted, both for static and transient. An additional mobility coefficient through Arora's mobility model was then suggested to fully fit the transient model in hard short-circuit operation.
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Mixdes 2023 - Comsol SiC Mosfet Modeling - Full Paper-HAL.pdf (731.2 Ko)
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