Physics-based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs
Résumé
To expedite testing, Time-Dependent Dielectric Breakdown (TDDB) analyses are conducted on commercial 4H-SiC MOSFETs at high gate-to-source voltages (V GS), under Fowler-Nordheim conduction only. However, as inferred, such conditions induce impact ionizationgenerated holes in the dielectric layer (SiO 2), resulting in a state transition in the effective dipolar moment. This accelerates the SiO 2 degradation leading to an overestimation of its intrinsic lifetime at typical V GS values for gate driving in power converters. To address this, a physics-based approach is proposed to design TDDB tests under such conditions and to correct the intrinsic lifetime prediction at nominal V GS values, shortening the testing time by up to 2 orders of magnitude. Thus, the proposed method is a well-suited candidate to be considered in SiC power device qualification standards, still under development.
Domaines
Electronique
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Physics_based_strategies_for_fast_TDDB_testing_and_lifetime_estimation_in_sic_power_mosfets.pdf (6.1 Mo)
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