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Communication Dans Un Congrès Année : 2022

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes

Résumé

We present a detailed analysis of Off-state Time Dependent Dielectric Breakdown (TDDB) under non-uniform field performed in MOSFET devices from 28nm FDSOI, 65nm SOI to 130nm nodes. Oxide breakdown in thin gate oxide is characterized under DC stress with different gate-length LG and as function of drain voltage VDS and temperature. We show that the leakage current is a better monitor for TDDB dependence under Off-mode stress whereas a new modeling is proposed. It is found that Weibull slopes β are higher in PFET due large amount of injected hot electrons than in NFET when hot holes are involved.

Domaines

Electronique
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Dates et versions

hal-03999581 , version 1 (21-02-2023)

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Citer

Tidjani Garba-Seybou, Xavier Federspiel, Alain Bravaix, Florian Cacho. New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. IEEE International Reliability Physics Symposium (IRPS 2022), Mar 2022, Dallas, TX (en ligne), United States. pp.11A.3-1-11A.3-7, ⟨10.1109/IRPS48227.2022.9764431⟩. ⟨hal-03999581⟩
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