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Communication Dans Un Congrès Année : 2022

Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes

Résumé

4H-Silicon Carbide (4H-SiC) bipolar PiN diode rectifiers demonstrated ultra-high breakdown voltage (VBR > 10 kV), high current handling capability (> 8 A), low reverse leakage current, and drift conductivity modulation, as compared to the well-developed 4H-SiC Schottky barrier diodes (SBDs). The concentration of the performance-limiting trap such as Z1/2 (EC – 0.67 eV) in the n-type 4H-SiC epilayer has been considerably reduced (< 5×1012 cm-3) in recent years. The PiN diode structure integrates double p-type layers (p and p+). The p-type 4H-SiC layer quality is sub-standard than the n-type. The periphery protection was realized by Al+ ion-implantation (p+). The ion-implantation-induced crystal defects introduce electrically active traps and affect the PiN diode characteristics via charge trapping. So, this work focuses on identifying the traps in the 4H-SiC PiN diodes by deep-level transient Fourier spectroscopy (DLTFS)
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Dates et versions

hal-03990840 , version 1 (15-02-2023)

Identifiants

  • HAL Id : hal-03990840 , version 1

Citer

P Vigneshwara Raja, Christophe Raynaud, Besar Asllani, Herve Morel, Dominique Planson. Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes. International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India. ⟨hal-03990840⟩
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