Quasi In Situ XPS on a SiO x F y Layer Deposited on Silicon by a Cryogenic Process
Résumé
A silicon oxyfluoride layer was deposited on a-Si samples using SiF 4 /O 2 plasma at different temperatures between −100°C and −40 °C. In situ X-ray photoelectron spectroscopy measurements were then performed to characterize the deposited layer. The sample was then brought back to room temperature and analyzed again. It has been shown that a temperature below −65 °C is needed to significantly enhance the physisorption of SiF x species. Hence, in this condition, a F-rich oxyfluoride layer, stable at low temperature only, is physisorbed. Above this threshold temperature, the native silicon oxide layer is fluorinated and the proportion of O in the deposited layer is higher and remains stable even when the sample is brought back to room temperature.
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Rev2bis-ECS-Quasi in situ XPS on a SiOxFy layer deposited on Silicon by a cryogenic process_final-1.pdf (761.75 Ko)
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