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Communication Dans Un Congrès Année : 2021

Model parameter extraction tool for the analysis of seriesconnected SiC-MOSFETs

Résumé

This paper presents a parameter identification tool for SiC-MOSFET Spice models for the purposes of studying the impact of parameter's spread on series-connected devices. A SiC-MOSFET model available in literature is adapted. A set of 30 commercial SiC-MOSFETs is characterized. The extration tool is used to generate Spice model file for each device, which are validated by comparison to double pulse measurement results. Generated SiC-MOSFET models are employed to perform simulation of switches made of two series-connected devices. The simulation results reveal that a difference of almost 0.2 V in V TH produces 21 % of V DS voltage unbalance during turn-off.

Domaines

Electronique
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Dates et versions

hal-03506812 , version 1 (02-01-2022)

Identifiants

  • HAL Id : hal-03506812 , version 1

Citer

Cédric Mathieu de Vienne, Pierre Lefranc, Besar Asllani, Pierre-Olivier Jeannin, Bruno Lefebvre. Model parameter extraction tool for the analysis of seriesconnected SiC-MOSFETs. PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, Nuremberg (on line), Germany. ⟨hal-03506812⟩
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