Investigation of SiC thyristors with varying amplifying gate design - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

Dates et versions

hal-03410752 , version 1 (01-11-2021)

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  • HAL Id : hal-03410752 , version 1

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S Scharnholz, R Hassdorf, D Bauersfeld, B Vergne, Luong Viêt Phung, et al.. Investigation of SiC thyristors with varying amplifying gate design. European Conference on Silicon Carbide and Related Materials (ECSCRM2020) 2021, Oct 2021, Tours, France. ⟨hal-03410752⟩
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