Autre Publication Scientifique Année : 2021

Introducing 5-nm FinFET technology in Microwind

Résumé

This paper describes the implementation of a high performance FinFET-based 5-nm CMOS technology in Microwind. After a general presentation of the electronic market and the roadmap to 1nm technology, design rules and basic metrics for the 5-nm node are presented. Concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator, basic cells and a 6-transistor RAM memory are also analyzed.

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Dates et versions

hal-03254444 , version 1 (08-06-2021)

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  • HAL Id : hal-03254444 , version 1

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Etienne Sicard, Lionel Trojman. Introducing 5-nm FinFET technology in Microwind. 2021. ⟨hal-03254444⟩
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