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Article Dans Une Revue IEEE Transactions on Microwave Theory and Techniques Année : 2020

High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

Résumé

This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Ω using the F 50 method, was verified by additional source-pull measurements, with special care for the GFET stability. The four noise parameters were then extracted by using the validated F 50 model up to 18 GHz, and the correlations between noise and small-signal parameters were shown for two different configurations: top-gated and back-gated GFETs.
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Dates et versions

hal-02540064 , version 1 (05-07-2021)

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Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, et al.. High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors. IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2116-2123. ⟨10.1109/TMTT.2020.2982396⟩. ⟨hal-02540064⟩
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