High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors

This article presents the small-signal and noise characterization of different technologies based on chemical vapor deposition (CVD) and silicon-carbide (SiC) graphene field-effect transistors (GFETs). The noise model, built on noise figure measurements under 50 Ω using the F 50 method, was verified by additional source-pull measurements, with special care for the GFET stability. The four noise parameters were then extracted by using the validated F 50 model up to 18 GHz, and the correlations between noise and small-signal parameters were shown for two different configurations: top-gated and back-gated GFETs.

Domaines

Micro et nanotechnologies/Microélectronique

Fichier principal

TMTT-2019-10-1173_manuscript_HAL.pdf (655.02 Ko)

Origine	Fichiers produits par l'(les) auteur(s)

Marina DENG : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02540064

Soumis le : lundi 5 juillet 2021-10:56:09

Dernière modification le : mercredi 24 janvier 2024-09:54:18

Archivage à long terme le : mercredi 6 octobre 2021-18:15:54

Dates et versions

hal-02540064 , version 1 (05-07-2021)

Identifiants

HAL Id : hal-02540064 , version 1
DOI : 10.1109/TMTT.2020.2982396

Citer

Marina Deng, Dalal Fadil, Wei Wei, Emiliano Pallecchi, Henri Happy, et al.. High-Frequency Noise Characterization and Modeling of Graphene Field-Effect Transistors. IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2116-2123. ⟨10.1109/TMTT.2020.2982396⟩. ⟨hal-02540064⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS UNIV-VALENCIENNES IEMN IMS-BORDEAUX IMS-BORDEAUX-FUSION UNIV-LILLE RENATECH

94 Consultations

220 Téléchargements