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Article Dans Une Revue Journal of Applied Physics Année : 2019

Resistive switching in a LaMnO3+δ / TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy

Résumé

Transition metal oxides are promising candidates in the development of valence change memories thanks to their ability to present the valence change mechanism. The resistive switching mechanism of TiN/LaMnO3 + δ (LMO)/Pt devices was investigated by operando hard X-ray photoelectron spectroscopy after careful in situ electrical characterization. The results presented here highlight the oxygen exchange process at the TiN/LMO interface. The active TiN top electrode acts as an oxygen getter, pumping O2− anions that are attracted by the positive bias and repelling them under negative bias. This drift of charged defects is correlated with variations of the interfacial resistance. Our results confirm the critical role of the TiN/LMO interface and oxygen drift in the resistive switching behavior of such devices. This work has been supported by the ANR funded project “Alps Memories” (No. ANR-15-CE24-0018). We acknowledge SOLEIL for provision of synchrotron radiation facilities (Proposal No. 20170169). The authors want to thank Odette Chaix-Pluchery and Hervé Roussel for Raman and X-ray diffraction measurements. Sample fabrication has been performed with the help of the “Plateforme Technologique Amont” of Grenoble with the financial support of the CNRS Renatech Network. In addition, this work benefited from the facilities and expertise of the OPE)N(RA characterization platform of FMNT (FR 2542, fmnt.fr) supported by CNRS, Grenoble INP, and UGA.

Domaines

Matériaux
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Dates et versions

hal-02428217 , version 1 (28-02-2020)

Identifiants

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Benjamin Meunier, Eugenie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Mónica Burriel, et al.. Resistive switching in a LaMnO3+δ / TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy. Journal of Applied Physics, 2019, 126 (22), pp.225302. ⟨10.1063/1.5125420⟩. ⟨hal-02428217⟩
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