Study based on the numerical simulation of a 5 kV asymmetrical 4H-SiC thyristor for high power pulses application
Résumé
This paper focuses on the study of a 5 kV Asymmetrical 4H-SiC thyristor and on its Junction edge termination protection. Based on a numerical semiconductor simulator, doping level and thickness of the different layers that constitute the device will be proposed. Several techniques of periphery protection such as Mesa structure, Junction Termination Extension (JTE) and Epitaxial Guard Rings (EGRs) have been studied. Furthermore we report on the simulation of the finite element thyristor inserted in a circuit for an Electromagnetic Launching (EML) application.
Domaines
Energie électrique
Origine : Fichiers produits par l'(les) auteur(s)
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