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Communication Dans Un Congrès Année : 2012

Design of an integrated power converter in Wide Band Gap for harsh environments

Résumé

AMPERE laboratory (Lyon, France) and Center National Microelectronics of Barcelona (SPAIN) have recently de­ veloped lateral MESFETs in SiC. The current purpose is to develop electronic systems based on these MESFETs for ap­ plications operating in harsh environments (e.g : High Temperature > 300°C). This paper presents the design of an in­ tegrated power converter with its driver in SiC and the characterisation of elementary functions. 1 Introduction The emergence of SiC power devices (BJT, JFET, Thyris­ tor) allows to consider the design of high power convert­ ers able to operate in harsh environment especially at very high voltages (>10kV) and high temperatures (>300°C). The driving circuitry converters doesn't exist in this tem­ perature range. The development of basic electronic func­ tions in SiC (comparator, oscillator...) is a preliminary step to conceive a full driver demonstrator. Several laboratories have developed elementary functions, based on either JFET [1], BJT [2] or MOSFET [3] devices. High temperature operations have been reported (up to 500°C for hundreds hours). However theses developments have mostly been focused on the design of "logic functions" and not on integrated power converters. Ampere and CNM laboratories have fabricated element­ ary dual-gate SiC MESFET. The methodology is now de­ tailed:-the determination of simulation models in order to estab­ lish a "design-kit" of SiC components,-the conception of analog electronic functions,-the design and fabrication of an integrated power con­ verter composed of both power switches and logic control circuitry,-the evaluation of performances and limitations of the demonstrator by means of simulations and experimental characterizations. After the presentation of the devices layout, a spice model determination is presented and the elementary functions described. An experimental analysis of a ring-oscillator is detailed, and simulation results of the integrated power converter based on SiC dual-gate MESFETs are presen­ ted. 2 Topology of lateral double-gate MESFET Lateral SiC-MESFETs have been fabricated (fgure 1) at CNM of Barcelona [4] [5]. These components have a dual-gate (gate (schottky) and body (pn)), which enable to consider new ways of controlling power switches. These MESFETs width channels is varying from 2 μm to 4 μm. The insulation of each component is made either by a "box" P+ on the sides and semi-insulating at the bottom or deep etching down-to the semi-insulating substrate. Semi-insulating substrates have been used in order to re­ duce bulk leakage current. A 5 μm tick P-type epilayer has been grown on-top of the SI-substrate in order to act as a RESURF depletion layer to improve the blocking voltage of the dual-gate MESFETs. Maximum blocking voltage is also tunable adjusting gate-drain dimension (VMAX < 300V). As a frst step, standard metallization process (operating as high as 200°C) has been implemen­ ted. Figure 1 Cross section of the elementary SiC dual-gate MESFET 3 SPICE modeling of the dual-gate SiC MESFET 3.1 Static model From static SiC-MESFET characterizations, a SPICE model has been developed. This is an empiric model
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Dates et versions

hal-02124203 , version 1 (09-05-2019)

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  • HAL Id : hal-02124203 , version 1

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Jean-François Mogniotte, Dominique Tournier, Pascal Bevilacqua, Philippe Godignon, Dominique Planson. Design of an integrated power converter in Wide Band Gap for harsh environments. Conference on Integrated Power Electronics systems, Mar 2012, Nuremberg, Germany. ⟨hal-02124203⟩
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