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Conference Papers Year : 2017

Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances

Abstract

MOSFETs variability in irradiated CIS up to 10 MGy (SiO2) is statistically investigated on about 65000 devices. Different variability sources are identified and the role played by the transistors composing the readout chain is clarified.
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Dates and versions

hal-02092843 , version 1 (08-04-2019)

Identifiers

  • HAL Id : hal-02092843 , version 1
  • OATAO : 22907

Cite

Serena Rizzolo, Vincent Goiffon, Marius Sergent, Franck Corbière, Sébastien Rolando, et al.. Multi-MGy total ionizing dose induced MOSFET variability effects on radiation hardened CMOS image sensor performances. Radiations Effects on Components and Systems (RADECS), Oct 2017, Geneva, Switzerland. pp.1-4. ⟨hal-02092843⟩
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