Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017

Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids

Résumé

A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .
Fichier principal
Vignette du fichier
ICSI-10_abstract_YB_2018.pdf (720.12 Ko) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01787985 , version 1 (08-05-2018)

Identifiants

Citer

Youcef A. Bioud, Abderraouf A Boucherif, Etienne A Paradis, Dominique A Drouin, Richard A Arès. Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids. Inter. Conf. Si Epi. heterostructures. procceding, ICSI10, May 2017, Coventry, United Kingdom. ⟨hal-01787985⟩
373 Consultations
24 Téléchargements

Altmetric

Partager

Gmail Mastodon Facebook X LinkedIn More