Low cost Ge/Si virtual substrate through dislocation trapping by nanovoids
Résumé
A low-cost method to reduce the threading disloca-tions density (TDD) in relaxed germanium (Ge) epilayers grown on silicon (Si) substrates is presented. Ge/Si sub-strate was treated with post epitaxial process to create a region with a high density of nanovoids in Ge layer which act as a barrier for threading dislocations propagation .
Origine | Fichiers produits par l'(les) auteur(s) |
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