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Article Dans Une Revue Materials Science Forum Année : 2012

Comparison of SiC Thyristors with Differently Etched JTEs

Résumé

This paper presents results attained with SiC GTO thyristors terminated by a single step and a graded etched JTE. The comparison of both types of devices reveals no significant difference in the on-state and switching characteristics but a higher blocking capability of some thyristors with the latter kind of termination. The best devices showed a forward breakdown voltage of nearly 6 kV, which is a distinct progress as against previous results of thyristors with a graded etched JTE. Furthermore, such GTO thyristors have been characterized dynamically for the first time.

Domaines

Electronique
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Dates et versions

hal-01627763 , version 1 (18-01-2019)

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Citer

Gontran Pâques, Sigo Scharnholz, Nicolas Dheilly, Dominique Planson, Rik W. de Doncker. Comparison of SiC Thyristors with Differently Etched JTEs. Materials Science Forum, 2012, 717-720, pp.1167 - 1170. ⟨10.4028/www.scientific.net/MSF.717-720.1167⟩. ⟨hal-01627763⟩
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