Improving the thermal management of power GaN devices
Résumé
GaN transistors require extremely short connexions (parasitic inductance of a few hundred of picohenries) to remain efficient, and yet one should provide them with electrical isolation and low thermal resistance to a heatsink. In this presentation, we compare a regular mounting (flip-chip mounting on a PCB), the same mounting, but on a ceramic substrate, and an alternative mounting where the die is cooled through its backside, and the electrical interconnects use a flexible PCB. These three structures are compared using simulation and experiments, and it is found that the ceramic substrate
reduces the total thermal resistance by a factor of 3 (5 K/W or less vs 15 K/W for a PCB substrate).
Domaines
Electronique| Origine | Fichiers produits par l'(les) auteur(s) |
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