Assessment of temperature dependence of the low frequency noise in unstrained and strained FinF - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

Assessment of temperature dependence of the low frequency noise in unstrained and strained FinF

Résumé

This paper aims at the studying the low frequency noise from 100 K up to room temperature in n- and p-channel triple-gate FinFET transistors with 25 nm fin-width, 65 nm fin-height, a high-k dielectric / metal gate stack, strained and unstrained substrates. These investigations allow evaluating the quality of the gate oxide interface, to identify defects in the silicon film and to make a correlation between the observed defects and some technological steps.
Fichier principal
Vignette du fichier
hal-00994151.pdf (422.53 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00994151 , version 1 (22-07-2014)

Identifiants

  • HAL Id : hal-00994151 , version 1

Citer

Rachida Talmat, H. Achour, Bogdan Cretu, Jean-Marc Routoure, A. Benfdila, et al.. Assessment of temperature dependence of the low frequency noise in unstrained and strained FinF. International Conference on Future Networks (ICFN ), Jun 2011, toronto, Canada. pp135-138. ⟨hal-00994151⟩
86 Consultations
74 Téléchargements

Partager

Gmail Facebook X LinkedIn More