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Conference Papers Year : 2013

A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer

Abstract

Magnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with preces- sional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magne- tized free layer (FL), and an in-plane magnetized analyzing layer (AL).
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Dates and versions

hal-00922298 , version 1 (30-12-2013)

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Abdelilah Mejdoubi, Guillaune Prenat, Bernard Dieny. A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer. 28th International Conference on Microelectronics (MIEL 2012), IEEE, May 2012, Nis, Serbia. ⟨10.1109/MIEL.2012.6222840⟩. ⟨hal-00922298⟩
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