A compact model of precessional spin-transfer switching for MTJ with a perpendicular polarizer
Résumé
Magnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability, high reliability and non-volatility. A macro-model of MTJ with preces- sional switching is presented in this paper. This model is based on Spin-Transfer Torque (STT) writing approach. The current-induced magnetic switching and excitations was studied in structures comprising a perpendicularly magnetized polarizing layer (PL), an in-plane magne- tized free layer (FL), and an in-plane magnetized analyzing layer (AL).
Fichier principal
Conf_miel.pdf (198.96 Ko)
Télécharger le fichier
Prest_MIEL.pdf (1.6 Mo)
Télécharger le fichier
| Origine | Fichiers produits par l'(les) auteur(s) |
|---|
| Format | Autre |
|---|