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Communication Dans Un Congrès Année : 2013

Analysis of the SiC VJFET gate punch-through and its dependence with the temperature

Fabien Dubois
Dominique Bergogne
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Dominique Tournier
Cyril Buttay
Régis Meuret
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Hervé Morel

Résumé

Turning off a SiC VJFET from INFINEON requires to apply a gate-to-source voltage comprised between the JFET gate threshold voltage and the punch-through voltage. Unfortunately, for applications operating over a large temperature range, these two limits vary with the temperature and reduce the useful blocking gate-to-source voltage range as the temperature rises. So, the punch-through temperature dependence is a very important feature for applications operating in a wide temperature range like aeronautic applications. This paper addresses the analysis and modeling of the punch-through phenomenon and its dependence to the temperature. The proposed model gives a good agreement with the experimental data.
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Dates et versions

hal-00874655 , version 1 (18-10-2013)

Identifiants

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Fabien Dubois, Dominique Bergogne, Dominique Tournier, Cyril Buttay, Régis Meuret, et al.. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature. EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩. ⟨hal-00874655⟩
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