Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasers
Résumé
The design of an electrically pumped InGaAs quantum well based vertical cavity surface emitting laser (VCSEL) on InP substrate is presented. Such optically pumped VCSELs have already been demonstrated. To design electrically pumped VCSEL, three simulations steps are needed: optical simulation gives access to the electric field repartition, to design the active zone and the Bragg mirrors. Thermal simulation is helpful to design metallic contacts while the energy band diagram is obtained by electrical simulation to design the buried tunnel junction useful for carrier injection. All these simulations are compared to experiment.
Domaines
Optique / photonique
Fichier principal
NUSOD2008-Abstract.pdf (103.1 Ko)
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NUSOD2008-Talk.pdf (569.53 Ko)
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| Origine | Fichiers produits par l'(les) auteur(s) |
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| Format | Autre |
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