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Conference Papers Year : 2009

Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

I. Cortes
  • Function : Author
E. Al-Alam
  • Function : Author
P. Regreny
Frédéric Morancho
A. Cazarre
  • Function : Author
Antoine Goullet
Karine Isoird

Abstract

In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 degrees C) on an N-type GaN epitaxial layer have been performed to analyze the quality and reliability of the resultant MOS device. Additional information has been extracted by comparing the small-signal simulations of equivalent MOS 2D structures with the C-V experimental results.
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Dates and versions

hal-00475900 , version 1 (23-04-2010)

Identifiers

  • HAL Id : hal-00475900 , version 1

Cite

I. Cortes, E. Al-Alam, Marie-Paule Besland, P. Regreny, Frédéric Morancho, et al.. Analysis of the C-V characteristic in SiO2/GaN MOS capacitors. 7th Spanish Conference on Electron Devices, Feb 2009, Santiago de Compostela, Spain. pp.254. ⟨hal-00475900⟩
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