Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111) - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (c) Year : 2009

Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111)

Y. Cordier
A. Lecotonnec
  • Function : Author
Sébastien Chenot
  • Function : Author
N. Baron
  • Function : Author
F. Nacer
  • Function : Author
Antoine Goullet
H. Lhermite
  • Function : Author
M. El Kazzi
  • Function : Author
P. Regreny
G. Hollinger
  • Function : Author

Abstract

In this work, AlGaN/GaN HEMT structures grown on Si(111) substrates were covered with SiNx dielectric films, in order to realize MIS-HEMT devices. The dielectric films have been deposited by plasma enhanced chemical vapor deposition using deposition conditions previously optimized for InP based devices. X-ray photoelectron spectroscopy was used to control the interface formation and characterize the deposited films. Capacitance-voltage, Hall effect and currentvoltage measurements were carried out on the MIS-HEMTs and HEMT reference devices and correlated with the dielectric layer quality.

Dates and versions

hal-00433241 , version 1 (18-11-2009)

Identifiers

Cite

Y. Cordier, A. Lecotonnec, Sébastien Chenot, N. Baron, F. Nacer, et al.. Evaluation of SiN films for AlGaN/GaN MIS-HEMTs on Si(111). physica status solidi (c), 2009, 6 (2), pp.1016. ⟨10.1002/pssc.200880870⟩. ⟨hal-00433241⟩
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