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Article Dans Une Revue Microelectronic Engineering Année : 2006

Low temperature plasma carbon nanotubes growth on patterned catalyst

Résumé

This paper reports on carbon nanotubes (CNT) arrays grown on patterned catalysts by plasma-enhanced chemical vapor deposition (PECVD). CNT growth has been performed by low pressure high-density plasma process at 700 C in acetylene/ammonia mixture. Prior to CNT growth, a standard lift-off process has been used for catalyst patterning. The chemical impact of the lift-off sequence on the catalyst activity is discussed with respect to the amount of Ni pre-deposited. In particular, it discusses the impact of this wet treatment on CNT growth when the catalyst amount is lower than a threshold value.

Dates et versions

hal-00379617 , version 1 (28-04-2009)

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M. Dubosc, T. Minea, Marie-Paule Besland, Christophe Cardinaud, Agnès A. Granier, et al.. Low temperature plasma carbon nanotubes growth on patterned catalyst. Microelectronic Engineering, 2006, 83, pp.2427. ⟨10.1016/j.mee.2006.10.050⟩. ⟨hal-00379617⟩
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