SiC Power Semiconductor Devices for new Applications in Power Electronics - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

SiC Power Semiconductor Devices for new Applications in Power Electronics

Résumé

This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfil new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.
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Dates et versions

hal-00373016 , version 1 (13-10-2020)

Identifiants

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Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩. ⟨hal-00373016⟩
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