In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2009

In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

Résumé

The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6 /O2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy XPS device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
Fichier non déposé

Dates et versions

hal-00365892 , version 1 (04-03-2009)

Identifiants

Citer

Jeremy Pereira, Laurianne E. Pichon, Remi Dussart, Christophe Cardinaud, Corinne Y. Duluard, et al.. In situ x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process. Applied Physics Letters, 2009, 94, pp.071501. ⟨10.1063/1.3085957⟩. ⟨hal-00365892⟩
143 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More