Journal Articles
IEEE Electron Device Letters
Year : 2013
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https://hal.science/hal-00994304
Submitted on : Wednesday, May 21, 2014-11:59:28 AM
Last modification on : Tuesday, October 19, 2021-10:59:17 AM
Cite
C. Fernandez, N. Rodriguez, A. Ohata, F. Gamiz, F. Andrieu, et al.. Bias-Engineered Mobility in Advanced FD-SOI MOSFETs. IEEE Electron Device Letters, 2013, 34 (7), pp.840-842. ⟨10.1109/LED.2013.2264045⟩. ⟨hal-00994304⟩
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